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TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 1 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com applications ? defense & aerospace ? broadband wireless product features ? frequency range: dc - 12 ghz ? 46.4 dbm nominal p sat at 3 ghz ? 69.0% maximum pae at 3 ghz ? 19.2 db nominal power gain at 3 ghz ? bias: v d = 32 v, i dq = 150 ma ? technology: tqgan25 on sic ? chip dimensions: 1.01 x 2.31 x 0.10 mm ordering information part eccn description TGF2955 3a001b.3.b 40 watt gan hemt general description the triquint TGF2955 is a discrete 7.56 mm gan on sic hemt which operates from dc-12 ghz. the TGF2955 is designed using triquint?s proven tqgan25 production process. this process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. the TGF2955 typically provides 46.4 dbm of saturated output power with power gain of 19.2 db at 3 ghz. the maximum power added efficiency is 69.0 % which ma kes the TGF2955 appropriate for high efficiency applica tions. lead-free and rohs compliant. pad configuration pad no. symbol 1-6 v g / rf in 7-9 v d / rf out backside source / ground functional block diagram
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 2 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings parameter value drain to gate voltage (v dg ) 100 v drain voltage (v d ) 40 v gate voltage range (v g ) -10 to 0 v drain current (i d ) 4.5 a gate current (i g ) -7.6 to 12.6 ma cw power dissipation (p d ) 41 w cw input power (p in ) @ 10ghz 39 dbm channel temperature (t ch ) 275c mounting temperature (30 sec.) 320c storage temperature ?65 to 150c operation of this device outside the parameter range s given above may cause permanent damage. these are stress ratings o nly, and functional operation of the device at these conditi ons is not implied. recommended operating conditions parameter value drain voltage range (v d ) 32 v drain quiescent current (i dq ) 150 ma drain current under rf drive ( i d ) (1) 2.5 a pinch-off gate voltage (v g ) ?3.5 v (typ.) channel temperature (t ch ) 225c (max.) (1) 10% pulses at 3ghz, power tuned
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 3 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com rf characterization ? model optimum power tune simulation conditions unless otherwise noted: t = 25 c, bond wires not included, pulse: 100us pw, 10%. see page 17 for reference planes. parameter typical value units frequency (f) 1 3 6 10 15 ghz drain voltage (v d ) 32 32 32 32 32 v bias current (i dq ) 150 150 150 150 150 ma output p3db (p 3db ) 46.3 46.4 46.3 46.3 46.0 dbm pae @ p 3db (pae 3db ) 64.7 63.2 58.9 53.5 45.4 % gain @ p3db (g 3db ) 26.7 19.2 14.3 10.7 7.8 db parallel output resistance (1) (r p ) 95.2 96.1 86.9 68.5 45.7 ? mm parallel output capacitance (1) (c p ) -0.023 0.123 0.206 0.234 0.224 pf/mm load impedance (zl) 12.6-j0.17 12.1+j2.70 7.89+j5.33 4.51+j4.53 3.13+j3.02 source impedance (zs) 1.64+j12.3 0.74+j4.08 0.70+j1.66 0.62+j0.39 0.55-j0.55 notes: 1. large signal equivalent output network (normalize d). rf characterization ? model optimum efficiency tune simulation conditions unless otherwise noted: t = 25 c, bond wires not included, pulse: 100us pw, 10%. see page 17 for reference planes. parameter typical value units frequency (f) 1 3 6 10 15 ghz drain voltage (v d ) 32 32 32 32 32 v bias current (i dq ) 150 150 150 150 150 ma output p3db (p 3db ) 45.1 45.1 44.9 45.7 45.8 dbm pae @ p 3db (pae 3db ) 70.5 69.0 63.9 56.4 46.8 % gain @ p3db (g 3db ) 27.9 20.7 15.2 11.1 8.1 db parallel output resistance (1) (r p ) 160.0 154.3 142.6 88.6 49.5 ? mm parallel output capacitance (1) (c p ) 0.292 0.276 0.277 0.269 0.252 pf/mm load impedance (zl) 19.5+j5.70 12.4+j9.97 5.85+j8.73 3.61+j5.41 2.75+j3.23 source impedance (zs) 1.64+j12.3 0.74+j4.08 0.70+j1.66 0.62+j0.39 0.55-j0.55 notes: 1. large signal equivalent output network (normalize d).
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 4 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com thermal and reliability information - pulsed (1) parameter test conditions value units thermal resistance, jc p d = 30.2 w, tbaseplate = 85c pulse: 100us, 5% 2.56 oc/w channel temperature, t ch 162 c median lifetime, t m 6.57e08 hrs thermal resistance, jc p d = 30.2 w, tbaseplate = 85c pulse: 100us, 10% 2.70 c/w channel temperature, t ch 167 c median lifetime, t m 4.11e8 hrs thermal resistance, jc p d = 30.2 w, tbaseplate = 85c pulse: 100us, 20% 2.95 oc/w channel temperature, t ch 174 c median lifetime, t m 1.87e8 hrs thermal resistance, jc p d = 30.2 w, tbaseplate = 85c pulse: 100us, 50% 3.81 oc/w channel temperature, t ch 200 c median lifetime, t m 1.54e7 hrs notes: 1. assumes eutectic attach using 1mil thick 80/20 a usn mounted to a 10 mil cumo carrier plate. thermal and reliability information - cw (1) parameter test conditions value units thermal resistance, jc p d = 7.56 w, tbaseplate = 85c cw 4.37 oc/w channel temperature, t ch 118 c median lifetime, t m 1.25e11 hrs thermal resistance, jc p d = 15.1w, tbaseplate = 85c cw 4.70 c/w channel temperature, t ch 156 c median lifetime, t m 1.27e9 hrs thermal resistance, jc p d = 22.7 w, tbaseplate = 85c cw 5.07 oc/w channel temperature, t ch 200 c median lifetime, t m 1.54e7 hrs thermal resistance, jc p d = 30.2 w, tbaseplate = 85c cw 5.53 oc/w channel temperature, t ch 252 c median lifetime, t m 2.22e5 hrs notes: 1. assumes eutectic attach using 1mil thick 80/20 a usn mounted to a 10 mil cumo carrier plate.
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 5 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com median lifetime 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 1e+16 1e+17 1e+18 25 50 75 100 125 150 175 200 225 250 275 median lifetime, t m (hours) channel temperature, t ch ( c) median lifetime vs. channel temperature
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 6 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com maximum channel temperature - pulsed 120.0 140.0 160.0 180.0 200.0 220.0 240.0 260.0 1.00e-06 1.00e-05 1.00e-04 1.00e-03 1.00e-02 1.00e-01 maximum channel temperature ( o c) pulse width (sec) maximum channel temperature carrier plate base fixed at 85 o c, pdiss =30.2 w (4 w/mm) 5% duty cycle 10% duty cycle 20% duty cycle 50% duty cycle
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 7 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com maximum channel temperature - cw 80 100 120 140 160 180 200 220 240 260 280 300 320 6.00 10.00 14.00 18.00 22.00 26.00 30.00 34.00 38.00 peak temperature, c cw power dissipation, w peak temperature vs. pdiss (w) for fixed 85 c on cu mo carrier plate carrier plate held at 85c recommended operating limit
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 8 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com model maximum gain performance bondwires not included. see page 17 for reference planes. 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 maximum gain vs. frequency frequency [ghz] gain [db] vd = 12v, idq = 150ma vd = 12v, idq = 375ma vd = 32v, idq = 150ma vd = 32v, idq = 375ma
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 9 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com model load pull contours vds = 32v, idq = 150ma. 3db compression referenced to peak gain. simulated signal: 10% pulses. bond wires not includ ed. see page 17 for reference planes. 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 3 4 5 1ghz, load-pull 46.2 46 45.8 33.1 32.6 32.1 68.3 63.3 58.3 ? ?? ? max power is 46.3dbm at z = 12.625-0.168i ? ? = 0.1161-0.0065i ? ?? ? max gain is 33.2db at z = 7.713+10.532i ? ? = 0.1658+0.496i ? ?? ? max pae is 70.5% at z = 19.515+5.699i ? ? = 0.3467+0.1261i zo = 10 ? zs(fo) = 1.64+12.34i ? zs(2fo) = 12 ? zs(3fo) = 12 ? zl(2fo) = 10 ? zl(3fo) = 10 ? power gain pae
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 10 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com model load pull contours vds = 32v, idq = 150ma. 3db compression referenced to peak gain. simulated signal: 10% pulses. bond wires not includ ed. see page 17 for reference planes. 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 3 4 2 3ghz, load-pull 46.3 46.1 45.9 23.6 23.1 22.6 68.1 63.1 58.1 ? ?? ? max power is 46.4dbm at z = 12.053+2.704i ? ? = 0.1065+0.1095i ? ?? ? max gain is 23.9db at z = 4.996+9.254i ? ? = 0.0342+0.596i ? ?? ? max pae is 69% at z = 12.443+9.972i ? ? = 0.2558+0.3307i zo = 10 ? zs(fo) = 0.74+4.08i ? zs(2fo) = 4.3 ? zs(3fo) = 4.3 ? zl(2fo) = 10 ? zl(3fo) = 10 ? power gain pae
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 11 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com model load pull contours vds = 32v, idq = 150ma. 3db compression referenced to peak gain. simulated signal: 10% pulses. bond wires not includ ed. see page 17 for reference planes. 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 3 4 5 0 . 8 0 . 9 1 1 . 2 1 . 4 1 . 6 1.8 2 6ghz, load-pull 46.1 45.9 45.7 15.3 14.8 14.3 59.1 54.1 49.1 ? ?? ? max power is 46.3dbm at z = 7.885+5.329i ? ? = 0.1663+0.2985i ? ?? ? max gain is 15.8db at z = 2.54+9.038i ? ? = 0.2266+0.7327i ? ?? ? max pae is 63.9% at z = 5.849+8.734i ? ? = 0.2548+0.5066i zo = 7 ? zs(fo) = 0.7+1.66i ? zs(2fo) = 1.6 ? zs(3fo) = 1.6 ? zl(2fo) = 7 ? zl(3fo) = 7 ? power gain pae
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 12 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com model load pull contours vds = 32v, idq = 150ma. 3db compression referenced to peak gain. simulated signal: 10% pulses. bond wires not includ ed. see page 17 for reference planes. 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 3 4 0 . 6 0 . 7 0 . 8 0 . 9 1 1 . 2 1 . 4 1 . 6 1.8 2 10ghz, load-pull 46.2 46 45.8 10.9 10.4 9.86 55.4 50.4 45.4 ? ?? ? max power is 46.3dbm at z = 4.513+4.533i ? ? = -0.0528+0.4146i ? ?? ? max gain is 11.4db at z = 2.335+7.027i ? ? = 0.0427+0.7206i ? ?? ? max pae is 56.4% at z = 3.605+5.406i ? ? = -0.0478+0.5342i zo = 7 ? zs(fo) = 0.62+0.39i ? zs(2fo) = 1.6 ? zs(3fo) = 1.6 ? zl(2fo) = 7 ? zl(3fo) = 7 ? power gain pae
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 13 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com model load pull contours vds = 32v, idq = 150ma. 3db compression referenced to peak gain. simulated signal: 10% pulses. bond wires not includ ed. see page 17 for reference planes. 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 15ghz, load-pull 45.8 45.6 45.4 9.43 8.93 8.43 42.6 37.6 32.6 ? ?? ? max power is 46dbm at z = 3.133+3.022i ? ? = -0.2688+0.3784i ? ?? ? max gain is 9.5db at z = 1.561+4.8i ? ? = -0.2442+0.6976i ? ?? ? max pae is 46.8% at z = 2.753+3.232i ? ? = -0.2934+0.4287i zo = 7 ? zs(fo) = 0.55-0.55i ? zs(2fo) = 1.6 ? zs(3fo) = 1.6 ? zl(2fo) = 7 ? zl(3fo) = 7 ? power gain pae
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 14 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com model power tuned data bond wires not included. see page 17 for reference planes. 34 35 36 37 38 39 40 41 42 43 44 45 46 47 25 26 27 28 29 30 31 32 33 34 35 output power [dbm] gain [db] TGF2955 gain and pae vs. output power 1ghz, vds =32v, idq =150ma, 100us, 10%, power tuned zs = 1.64+j12.3 ? zl = 12.6-j0.17 ? 34 35 36 37 38 39 40 41 42 43 44 45 46 47 10 16 22 28 34 40 46 52 58 64 70 pae [%] gain pae 34 35 36 37 38 39 40 41 42 43 44 45 46 47 17 18 19 20 21 22 23 24 25 26 27 output power [dbm] gain [db] TGF2955 gain and pae vs. output power 3ghz, vds =32v, idq =150ma, 100us, 10%, power tuned zs = 0.74+j4.08 ? zl = 12.1+j2.70 ? 34 35 36 37 38 39 40 41 42 43 44 45 46 47 15 20 25 30 35 40 45 50 55 60 65 pae [%] gain pae 34 35 36 37 38 39 40 41 42 43 44 45 46 47 12 13 14 15 16 17 18 19 20 21 22 output power [dbm] gain [db] TGF2955 gain and pae vs. output power 6ghz, vds =32v, idq =150ma, 100us, 10%, power tuned zs = 0.70+j1.66 ? zl = 7.89+j5.33 ? 34 35 36 37 38 39 40 41 42 43 44 45 46 47 10 15 20 25 30 35 40 45 50 55 60 pae [%] gain pae 34 35 36 37 38 39 40 41 42 43 44 45 46 47 8 9 10 11 12 13 14 15 16 17 18 output power [dbm] gain [db] TGF2955 gain and pae vs. output power 10ghz, vds =32v, idq =150ma, 100us, 10%, power tune d zs = 0.62+j0.39 ? zl = 4.51+j4.53 ? 34 35 36 37 38 39 40 41 42 43 44 45 46 47 10 15 20 25 30 35 40 45 50 55 60 pae [%] gain pae 34 35 36 37 38 39 40 41 42 43 44 45 46 47 5 6 7 8 9 10 11 12 13 14 15 output power [dbm] gain [db] TGF2955 gain and pae vs. output power 15ghz, vds =32v, idq =150ma, 100us, 10%, power tune d zs = 0.55-j0.55 ? zl = 3.13+j3.02 ? 34 35 36 37 38 39 40 41 42 43 44 45 46 47 10 15 20 25 30 35 40 45 50 55 60 pae [%] gain pae
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 15 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com model efficiency tuned data bond wires not included. see page 17 for reference planes. 36 37 38 39 40 41 42 43 44 45 46 25 26 27 28 29 30 31 32 33 34 35 output power [dbm] gain [db] TGF2955 gain and pae vs. output power 1ghz, vds =32v, idq =150ma, 100us, 10%, efficiency tuned zs = 1.64+j12.3 ? zl = 19.5+j5.70 ? 36 37 38 39 40 41 42 43 44 45 46 25 30 35 40 45 50 55 60 65 70 75 pae [%] gain pae 36 37 38 39 40 41 42 43 44 45 46 18 19 20 21 22 23 24 25 26 27 28 output power [dbm] gain [db] TGF2955 gain and pae vs. output power 3ghz, vds =32v, idq =150ma, 100us, 10%, efficiency tuned zs = 0.74+j4.08 ? zl = 12.4+j9.97 ? 36 37 38 39 40 41 42 43 44 45 46 20 25 30 35 40 45 50 55 60 65 70 pae [%] gain pae 36 37 38 39 40 41 42 43 44 45 46 13 14 15 16 17 18 19 20 21 22 23 output power [dbm] gain [db] TGF2955 gain and pae vs. output power 6ghz, vds =32v, idq =150ma, 100us, 10%, efficiency tuned zs = 0.70+j1.66 ? zl = 5.85+j8.73 ? 36 37 38 39 40 41 42 43 44 45 46 20 25 30 35 40 45 50 55 60 65 70 pae [%] gain pae 36 37 38 39 40 41 42 43 44 45 46 9 10 11 12 13 14 15 16 17 18 19 output power [dbm] gain [db] TGF2955 gain and pae vs. output power 10ghz, vds =32v, idq =150ma, 100us, 10%, efficiency tuned zs = 0.62+j0.39 ? zl = 3.61+j5.41 ? 36 37 38 39 40 41 42 43 44 45 46 10 15 20 25 30 35 40 45 50 55 60 pae [%] gain pae 36 37 38 39 40 41 42 43 44 45 46 6 7 8 9 10 11 12 13 14 15 16 output power [dbm] gain [db] TGF2955 gain and pae vs. output power 15ghz, vds =32v, idq =150ma, 100us, 10%, efficiency tuned zs = 0.55-j0.55 ? zl = 2.75+j3.23 ? 36 37 38 39 40 41 42 43 44 45 46 5 10 15 20 25 30 35 40 45 50 55 pae [%] gain pae
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 16 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com mechanical drawing bond pads pad no. description dimensions 1, 2, 3, 4, 5, 6 gate 0.125 x 0.125 7, 8, 9 drain 0.150 x 0.546 die backside source / ground 1.007 x 2.305 1. units: millimeters 2. thickness: 0.100 mm 3. die xy size tolerance: 0.050 mm
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 17 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com reference planes
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 18 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com model a model is available for download from modelithics (at http://www.modelithics.com/mvp/triquint&tab=3 ) by approved triquint customers. the model is compatible with the indust ry?s most popular design software including agilent ads and national instruments/awr applications. once on the modelithics web page, the user will need to re gister for a free license before being granted the download. assembly notes component placement and adhesive attachment assembl y notes: ? vacuum pencils and/or vacuum collets are the prefe rred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement . ? organic attachment (i.e. epoxy) not recommended. reflow process assembly notes: ? use ausn (80/20) solder and limit exposure to temp eratures above 300 c to 3-4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is criti cal for long-term reliability. ? devices must be stored in a dry nitrogen atmospher e. interconnect process assembly notes: ? ball bonding is the preferred interconnect techniq ue, except where noted on the assembly diagram. ? force, time, and ultrasonics are critical bonding parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. disclaimer gan/sic devices are susceptible to damage from elec trostatic discharge. proper precautions should be o bserved during handling, assembly and test. bias-up procedure bias-down procedure 1. v g set to -5 v. 2. v d set to 32 v. 3. adjust v g more positive until quiescent i d is 150 ma. 4. apply rf signal. 1. turn off rf signal. 2. turn off v d and wait 1 second to allow drain capacitor dissipation. 3. turn off v g .
TGF2955 40 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 19 of 19 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com product compliance information esd sensitivity ratings caution! esd-sensitive device esd rating: tbd value: tbd test: tbd standard: tbd solderability comp atible with gold/tin (320c maximum reflow temperature) soldering processes. rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazar dous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free contact information for the latest specifications, additional product i nformation, worldwide sales and distribution locati ons, and information about triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@triquint.com fax: +1.972.994.8504 for technical questions and application information : email: info-products@triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the informat ion contained herein. triquint assumes no responsibility or liability wha tsoever for any of the information contained herein . triquint assumes no responsibility or liability wha tsoever for the use of the information contained he rein. the information contained herein is provid ed "as is, where is" and with all faults, and the ent ire risk associated with such information is entirely with the user. all information contained herein is subject to chan ge without notice. customers should obtain and verify the latest relevant informa tion before placing orders for triquint products. the information contained herein or any use of such information does not grant, expl icitly or implicitly, to any party any patent right s, licenses, or any oth er intellectual property rights, whether with regard t o such information itself or anything described by such information. triquint products are not warranted or authorized f or use as critical components in medical, life-savi ng, or life- sustaining applications, or other applications where a failure w ould reasonably be expected to cause severe persona l injury or death.

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